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Applicability of Field Plate in Double Channel GaN HEMT for Radio-Frequency and Power-Electronic Applications |
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| Authors: | Chugh Nisha Kumar Manoj Haldar Subhasis Bhattacharya Monika Gupta RS |
| Affiliation: | 1.Department of Electronics and Communication, USIC&T, GGSIPU, Sector-16 C, Dwarka, New Delhi, 110078, India ;2.Subhasis Haldar is with Department of Physics, Moti Lal Nehru College, University of Delhi, New Delhi, 110021, India ;3.Department of Electronics, Acharya Narendra Dev College, Kalkaji, New Delhi, 110019, India ;4.Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology, Sector-22, Rohini, New Delhi, 110086, India ; |
| Abstract: | Silicon - In the present communication, for the first time, applicability of Field Plate (FP) for Double Channel (DC) AlGaN/GaNHEMT is demonstrated. Impact of design space parameters such as field... |
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