Embedding Two P+ Pockets in the Buried Oxide of Nano Silicon on Insulator MOSFETs: Controlled Short Channel Effects and Electric Field |
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| Authors: | Aghaeipour Zahra Naderi Ali |
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| Affiliation: | 1.Electrical Engineering Department, Energy Faculty, Kermanshah University of Technology, Kermanshah, Iran
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| Abstract: | Silicon - This paper proposes an efficient structure for nanoscale silicon on insulator (SOI) MOSFETs. Two P+ pockets are considered in buried oxide, a pocket under source region and another under... |
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