| 采用优化的腐蚀工艺对TiSi2接触特性的改善 |
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| 引用本文： | 田波,吴郁,胡冬青,亢宝位. 采用优化的腐蚀工艺对TiSi2接触特性的改善[J]. 北京工业大学学报, 2009, 35(6) |
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| 作者姓名： | 田波 吴郁 胡冬青 亢宝位 |
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| 作者单位： | 北京工业大学电子信息与控制工程学院,北京,100124;北京工业大学电子信息与控制工程学院,北京,100124;北京工业大学电子信息与控制工程学院,北京,100124;北京工业大学电子信息与控制工程学院,北京,100124 |
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| 基金项目： | 北京市教委科技发展计划 |
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| 摘 要： | 针对传统TiSi_2工艺中RCA1(NH_4OH:H_2O_2:H_2O)溶液对于TiN/Ti与TiSi_2的选择性不好会造成硅化物的损失、提高接触电阻的问题,提出一种采用2次选择性腐蚀的工艺方法进行改善.通过具体的工艺实验证明,与传统工艺方法相比,该工艺方法可以在保持低漏电流的前提下,有效减少TiSi_2的损失,使得方块电阻降低约18%.该工艺方法具有简单易行的特点,适用于大规模工业生产.
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| 关 键 词： | TiSi2 选择性腐蚀 工艺优化 RCA1溶液 |
Improvement on Contact Characteristic of TiSi_2 by Using Optimized Etching Process |
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| TIAN Bo,WU Yu,HU Dong-qing,KANG Bao-wei. Improvement on Contact Characteristic of TiSi_2 by Using Optimized Etching Process[J]. Journal of Beijing Polytechnic University, 2009, 35(6) |
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| Authors: | TIAN Bo WU Yu HU Dong-qing KANG Bao-wei |
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| Affiliation: | College of Electronic Information and Control Engineering;Beijing University of Technology;Beijing 100124;China |
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| Abstract: | A optimized process consisting of two-step selective etching is proposed to solve the problem that the selectivity between TiN/Ti and TiSi_2 is poor with the conventional RCA1(NH_4OH:H_2O_2:H_2O) solution and results in a loss of a substantial part of the formed silicide thickness and hence in an increase of the contact resistance.Compared to the traditional process,this process allows an important reduction of the TiSi_2 thickness loss and hence,makes the reduction of the sheet resistance about 18%.Further... |
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| Keywords: | TiSi2 |
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