| Conductive Filament Formation in the HfO2：First Principles study |
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| 引用本文： | 周茂秀,赵强,张伟,刘琦,代月花. Conductive Filament Formation in the HfO2：First Principles study[J]. 半导体学报, 2012, 33(7): 072002-4 |
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| 作者姓名： | 周茂秀 赵强 张伟 刘琦 代月花 |
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| 基金项目： | Project supported by the National Youth Science Foundation, China （No. 61006064）. |
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| 摘 要： | The conductive path formed by the interstitial Ag or substitutional Ag in HfO2 was investigated by the Vienna ab initio simulation package (VASP) based on the DFT theory. The calculated results indicated that the ordering of interstitial Ag ions at special positions can form a conductive path while it can not form at other positions. Then the orientation dependence of this conductive path was investigated. Some types of super cells are also built to study the rupture of path, corresponding to some possible “off” states.
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| 关 键 词： | 导电通路 路径 第一原理 氧化铪 密度泛函理论 计算模拟 计算结果 维也纳 |
| 修稿时间： | 2012-03-06 |
The conductive path in HfO2: first principles study |
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| Zhou Maoxiu,Zhao Qiang,Zhang Wei,Liu Qi and Dai Yuehua. The conductive path in HfO2: first principles study[J]. Chinese Journal of Semiconductors, 2012, 33(7): 072002-4 |
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| Authors: | Zhou Maoxiu Zhao Qiang Zhang Wei Liu Qi Dai Yuehua |
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| Affiliation: | Institute of Electronic and Information Project, Anhui University, Hefei 230601, China;Institute of Electronic and Information Project, Anhui University, Hefei 230601, China;Institute of Electronic and Information Project, Anhui University, Hefei 230601, China;Laboratory of Nano-Fabrication and Novel Device Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Electronic and Information Project, Anhui University, Hefei 230601, China |
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| Abstract: | |
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| Keywords: | Resistance switching mechanism DFT Conductive path lattice orientation. |
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