正常工作状态与零偏置JFET输入运算放大器的辐射损伤

对处于正常工作和零偏置状态的JFET输入运算放大器,进行了高低剂量率辐射试验。结果表明,工作状态影响JFET运放电路的辐射效应和辐射损伤。正常工作状态下,JFET输入运算放大器表现出时间相关效应,而零偏置状态下则具有低剂量率损伤增强效应。高剂量率或低剂量率辐射情况下,正常工作的JFET输入运放电路参数退化大于或小于零偏置状态。高剂量率辐射会在JFET输入运放的基本单元双极晶体管产生氧化物正电荷和界面陷阱。从氧化物正电荷和界面态与工作状态的关系方面,对JFET运放电路的退化行为进行了解释。

Radiation damage to working or zero-biased JFET-input operational amplifiers.

High-or low-dose-rate irradiation was performed on JFET-input operational amplifiers(op-amps)under normal operating or zero-biased conditions.The results show that operational conditions have a great influence on the radiation effects and damage to JFET-input operational amplifiers.Under normal condition, the JFET-input op-amps exhibited time-dependent effect(TDE);while they show enhanced low-dose-rate sensitivity(ELDRS)at zero-biased condition.Compared with zero-biased condition, the JFET-input op-amps degrade more severely at normal condition for high-dose-rate irradiation;while for the low-dose-rate case,they degraded more at normal condition. Irradiation would induce positive oxide-trapped charge and interface traps in bipolar transistors.which are the basic components in JFET-input op-amps.From the dependence of oxide trapped charge and interface traps on operational conditions,the degradation behavior is discussed.