| 硅烷氨气比对PECVD氮化硅薄膜性能的影响 |
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| 引用本文： | 屈盛,毛和璜,韩增华,曹晓宁,周春兰,王文静,张兴旺.硅烷氨气比对PECVD氮化硅薄膜性能的影响[J].中国建设信息,2011(6):52-53,57. |
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| 作者姓名： | 屈盛 毛和璜 韩增华 曹晓宁 周春兰 王文静 张兴旺 |
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| 作者单位： | 欧贝黎新能源科技股份有限公司;中国科学院电工研究所;中国科学院半导体研究所 |
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| 基金项目： | 江苏省科技基础设施建设计划项目(BM2009611);江苏省自然科学基金项目(BK2009620) |
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| 摘 要： | 利用PECVD在硅片上沉积SiNx:H薄膜,研究硅烷氨气流量比对SiNx:H薄膜的组分、折射率和钝化效果的影响。X射线光电子能谱(XPS)和椭偏仪的测试结果表明,硅烷氨气流量比(SAR)在0.09～0.38以内沉积的所有薄膜都呈现出富硅的组分,而且随着SAR的逐渐增加,Si的含量逐渐增加,折射率逐渐增大。微波光电导衰退(μ-PCD)的测试结果表明,Si含量适中(也即折射率适中)的薄膜,相比Si含量过低或过高的薄膜,呈现出更为稳定的钝化效果。
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| 关 键 词： | 晶体硅太阳电池 PECVD 氮化硅薄膜 硅烷氨气比 |
Effect of silane-ammonia rate on the properties of PECVD SiN_x:H thin film |
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| Qu Sheng,Mao Hehuang, Han Zenghua, Cao Xiaoning, Zhou Chunlan, Wang Wenjing and Zhang Xingwang.Effect of silane-ammonia rate on the properties of PECVD SiN_x:H thin film[J].Information of China Construction,2011(6):52-53,57. |
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| Authors: | Qu Sheng Mao Hehuang Han Zenghua Cao Xiaoning Zhou Chunlan Wang Wenjing and Zhang Xingwang |
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| Affiliation: | Eoplly New Energy Technology Ltd.,Co.Institute of electrical engineering,CAS,Institute of Semiconductor,CAS. |
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| Abstract: | SiNx:H thin films were deposited onto silicon wafers using a PECVD, and effect of silane-ammonia flow ratio (SAR) on composition, refractivity, and passivation property of the thin films were investigated. Results of X-ray photoelectron spectroscopy (XPS) and ellipsometry show that, all the as-deposited thin films are Si-rich within SAR 0.09 ~ 0.38, and Si content and refractivity of the thin films increase with SAR. Microwave photoconduction decay (μ-PCD) results show that, thin films with moderate Si contents (also moderate refractivity) exhibit more stable passivation properties, comparing with thin films of lower or higher Si contents. |
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| Keywords: | Crystalline silicon solar cells PECVD SiNx:H thin films Silane-Ammonia-Ratio |
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