| GaN HEMT栅驱动技术研究进展 |
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| 引用本文： | 周德金,何宁业,宁仁霞,许媛,徐宏,陈珍海,黄伟,卢红亮. GaN HEMT栅驱动技术研究进展[J]. 电子与封装, 2021, 21(2): 36-47 |
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| 作者姓名： | 周德金 何宁业 宁仁霞 许媛 徐宏 陈珍海 黄伟 卢红亮 |
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| 作者单位： | 复旦大学微电子学院,上海200443;清华大学无锡应用技术研究院,江苏无锡214072;黄山学院智能微系统安徽省工程技术研究中心,安徽黄山245041;清华大学无锡应用技术研究院,江苏无锡214072;清华大学无锡应用技术研究院,江苏无锡214072;黄山学院智能微系统安徽省工程技术研究中心,安徽黄山245041;复旦大学微电子学院,上海200443;桂林电子科技大学广西精密导航技术与应用重点实验室,广西桂林541004;复旦大学微电子学院,上海200443 |
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| 基金项目： | 安徽省重点研究与开发计划项目(201904b11020007);广西精密导航技术与应用重点实验室开放基金(DH201913)。 |
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| 摘 要： | GaNHEMT器件由于其击穿场强高、导通电阻低等优越的性能,在高效、高频功率转换领域中有着广泛的应用前景.栅驱动芯片对于GaN HEMT器件应用起着至关重要的作用.介绍了GaN HEMT器件特性和驱动要求,对其栅驱动芯片的典型架构和每种芯片架构各自的关键实现技术研究现状进行了综述.同时介绍了GaN基单片集成功率IC的发...
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| 关 键 词： | GaN HEMT 栅驱动电路 电平移位 绝缘隔离 半桥 |
Advances in GaN HEMT Gate Driver Technology Research |
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| ZHOU Dejin,HE Ningye,NING Renxia,XU Yuan,XU Hong,CHEN Zhenhai,HUANG Wei,LU Hongliang. Advances in GaN HEMT Gate Driver Technology Research[J]. Electronics & Packaging, 2021, 21(2): 36-47 |
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| Authors: | ZHOU Dejin HE Ningye NING Renxia XU Yuan XU Hong CHEN Zhenhai HUANG Wei LU Hongliang |
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| Affiliation: | (School of Microelectronics,Fudan University,Shanghai 200443,China;Wuxi Research Institute of Applied Technologies,Tsinghua University,Wuxi 214072,China;Engineering Technology Research Center of Intelligent Microsystems,Anhui Province,Huangshan University,Huangshan 245041,China;Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China) |
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| Abstract: | GaN HEMT devices have a wide application prospect in high efficiency and high frequency power converters,due to their excellent features such as high breakdown voltage and low on-resistance.The gate driver plays the key effort for the application of GaN HEMT devices.In this paper,the characteristic and driving requirement of GaN HEMT devices are introduced.The global research status of chip structure and key technical issues of each structure for gate driver IC are reviewed.Then the research status of all-GaN based power IC is introduced.Finally,the technology development trend of GaN HEMT gate driver technology is summarized. |
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| Keywords: | GaN HEMT gate driver level-shift galvanically isolate half bridge |
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