微光器件铟封漏气因素分析

为解决微光管光电阴极与管体铟封漏气问题,采用扫描电镜和X射线能谱仪对铟材和封接过程工艺质量进行全面分析,结果表明造成铟封漏气的根本原因是铟量小,铟表面氧化和吸附的杂质污染造成的,与铟纯度无关。采取提高真空度,改进化铟工艺,控制铟高温外流等措施解决了阴极与管体铟封漏气问题,使气密性成品率大于90%。

Analysis of Indium Leaks Factor of the Low-Light-Device

In order to resolve a problem of photocathode and body indium leaking of a shimmer tube,the scanning electron microscope and X-ray energy spectrum analyzer can analyze with seal to connect a process craft quality to carry on completely to the indium material.The results show that basic reason for indium leaking are the amount of indium too small,the indium surface oxidizes and the miscellaneous quality pollution.It is irrelevant with indium the pure degree.Through adopting higher vacuum environment,improving an indium craft and controlling indium heating outflow,we solve the problem of cathode and body indium leaking.The finished product's rate of gas tightness can be more than 90%.