| Performance improvement of ZnO film by room-temperature oxygen plasma pretreatment |
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| 引用本文： | 赵平 夏义本 王林军 刘健敏 徐闰 彭鸿雁 史伟民. Performance improvement of ZnO film by room-temperature oxygen plasma pretreatment[J]. 中国有色金属学会会刊, 2006, 16(B01): 310-312. DOI: 10.1016/S1003-6326(06)60198-2 |
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| 作者姓名： | 赵平 夏义本 王林军 刘健敏 徐闰 彭鸿雁 史伟民 |
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| 作者单位： | [1]School of Materials Science ＆ Engineering, Shanghai University, Shanghai 200072, China [2]Physics Department, Mudanjiang Normal College, Mudanjiang 157012, China |
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| 基金项目： | Project（60577040） supported by the National Natural Science Foundation of China; Project（0404） supported by Shanghai Foundation of Applied Materials Research and Development; Projects（0452nm051, 05nm05046） supported by the Nano-technology Project of Shanghai; Project（T0101 ） supported by Shanghai Leading Academic Disciplines |
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| 摘 要： | The room-temperature oxygen plasma treatment before depositing ZnO films on nanocrystalline diamond substrates was studied. The nanocrystalline diamond substrates were pretreated in oxygen plasma at 50 W for 30 min at room temperature and then ZnO films were sputtered on diamond substrates at 400 W. The X-ray diffraction （XRD） patterns show that the c-axis orientation of ZnO film increases evidently after oxygen plasma pretreatment. The AFM and SEM measurements also show that the high c-axis orientation of ZnO film and the average surface roughness is less than 5 nm. The resistivity of ZnO films increases nearly two orders of magnitude to 1.04 - 10^8 Ω.cm. As a result, room-temperature oxygen plasma pretreatment is indeed a simple and effective way to improve the performance of ZnO film used in SAW devices by ameliorating the combination between diamond film and ZnO film and also complementing the absence of oxygen atoms in ZnO film.
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| 关 键 词： | 氧化锌薄膜 室温 氧等离子体预处理 性能改进 纳米晶金刚石膜 声表面波器件 |
| 收稿时间： | 2006-04-10 |
| 修稿时间： | 2006-04-25 |
Performance improvement of ZnO film by room-temperature oxygen plasma pretreatment |
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| ZHAO Ping, XIA Yi-ben, WANG Lin-jun, LIU Jian-min,XU Run, PENG Song-yan, SHI Wei-min. Performance improvement of ZnO film by room-temperature oxygen plasma pretreatment[J]. Transactions of Nonferrous Metals Society of China, 2006, 16(B01): 310-312. DOI: 10.1016/S1003-6326(06)60198-2 |
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| Authors: | ZHAO Ping XIA Yi-ben WANG Lin-jun LIU Jian-min XU Run PENG Song-yan SHI Wei-min |
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| Affiliation: | 1. School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China;2. Physics Department, Mudanjiang Normal College, Mudanjiang 157012, China;1. Soft Innovative Materials Research Center, Korea Institute of Science and Technology, Eunhari san 101, Bongdong-eup, Wanju-gun, Jeonbuk 565-905, Republic of Korea;2. Interface Control Research Center, Future Convergence Research Division, Korea Institute of Science and Technology, Hwarangno 14 gil 5, Seoul 136-791, Republic of Korea;3. Department of Metallurgy and Materials Engineering, KU Leuven, 3001 Leuven, Belgium;1. College of Chemical and Environmental Engineering, Shandong University of Science and Technology, 266590 Shandong, PR China;2. State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 116024 Dalian, PR China;3. Laboratory for Corrosion and Protection, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;1. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China;2. School of Energy, Soochow University, Suzhou, Jiangsu 215006, China;3. Faculty of Engineering, University of Toyama, Gofuku 3190, Toyama 930-8555, Japan |
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| Abstract: | The room-temperature oxygen plasma treatment before depositing ZnO films on nanocrystalline diamond substrates was studied. The nanocrystalline diamond substrates were pretreated in oxygen plasma at 50 W for 30 min at room temperature and then ZnO films were sputtered on diamond substrates at 400 W. The X-ray diffraction (XRD) patterns show that the c-axis orientation of ZnO film increases evidently after oxygen plasma pretreatment. The AFM and SEM measurements also show that the high c-axis orientation of ZnO film and the average surface roughness is less than 5 nm. The resistivity of ZnO films increases nearly two orders of magnitude to 1.04×108 Ω·cm. As a result, room-temperature oxygen plasma pretreatment is indeed a simple and effective way to improve the performance of ZnO film used in SAW devices by ameliorating the combination between diamond film and ZnO film and also complementing the absence of oxygen atoms in ZnO film. |
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| Keywords: | ZnO film c-axis orientation nanocrystalline diamond film oxygen plasma SAW device |
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