A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz |
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| Authors: | Hongtao Xu Gao S. Heikman S. Long S.I. Mishra U.K. York R.A. |
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| Affiliation: | Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA; |
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| Abstract: | A single stage class-E power amplifier in GaN high electron mobility transistor (HEMT) technology is reported. The circuit operates at 1.9 GHz. At 30-V drain bias, a power-added-efficiency (PAE) of 57% and a maximum output power of over 37dBm was achieved, corresponding to a power density of 5.25W/mm. At 40-V drain bias, an output power of 38.7dBm is achieved at 50% PAE corresponding to a power density of 7.4W/mm. |
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