aThe Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
Abstract:
Electron-beam-irradiation effects on silicon carbide (SiC) was investigated as a function of the irradiated temperatures. Single crystalline 6H-SiC was irradiated with 300 kV electrons at temperatures ranging from ?170 to 250 °C. It was found that amorphous SiC is induced at ?170 °C and room temperature, while crystalline Si is formed at 250 °C with a high electron fluence. It is considered that preferential knock-on displacement of C atoms and damage recovery play an important role in the formation of the amorphous SiC and crystalline Si.