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| Experimental studies of N~+ implantation into CVD diamond thin films | |
| 引用本文： | 辛火平,林成鲁,王建新,邹世昌,石晓红,林梓鑫,周祖尧,刘祖刚. Experimental studies of N~+ implantation into CVD diamond thin films[J]. 中国科学E辑(英文版), 1997, 40(4): 361-368. DOI: 10.1007/BF02919421 |
| 作者姓名： | 辛火平 林成鲁 王建新 邹世昌 石晓红 林梓鑫 周祖尧 刘祖刚 |
| 作者单位： | National Laboratory of Functional Materials for Informatics，Shanghai Institute of Metallurgy，Chinese Academy of Sciences，Shanghai 200050，China，National Laboratory of Functional Materials for Informatics，Shanghai Institute of Metallurgy，Chinese Academy of Sciences，Shanghai 200050，China，National Laboratory of Functional Materials for Informatics，Shanghai Institute of Metallurgy，Chinese Academy of Sciences，Shanghai 200050，China，National Laboratory of Functional Materials for Informatics，Shanghai Institute of Metallurgy，Chinese Academy of Sciences，Shanghai 200050，China，National Laboratory of Infrared Physics，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China，Ion Beam Laboratory，Shanghai Institute of Metallurgy，Chinese Academy of Sciences，Shanghai 200050，China，Ion Beam Laboratory，Shanghai Institute of Metallurgy，Chinese Academy of Sciences，Shanghai 200050，China，Department of Materials Science，Shanghai University，Shanghai 201800，China |
| 摘 要： | The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitroge |
| 关 键 词： | N+ implantation into diamond films Raman spectroscopy ultraviolet photoluminescence spec-troscopy (UV-PL) electrically inactive deep-level impurity C≡N covalent bond carbon nitride X-ray photoelec-tron spectroscopy (XPS). N+ implantation |
Experimental studies of N+ implantation into CVD diamond thin films |
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| Huoping Xin,Chenglu Lin,Jianxin Wang,Shichang Zou,Xiaohong Shi,Zixin Lin,Zuyao Zhou,Zugang Liu. Experimental studies of N+ implantation into CVD diamond thin films[J]. Science in China(Technological Sciences), 1997, 40(4): 361-368. DOI: 10.1007/BF02919421 | |
| Authors: | Huoping Xin Chenglu Lin Jianxin Wang Shichang Zou Xiaohong Shi Zixin Lin Zuyao Zhou Zugang Liu |
| Affiliation: | 1. National Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 200050, Shanghai, China 2. National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China 3. Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 200050, Shanghai, China 4. Department of Materials Science, Shanghai University, 201800, Shanghai, China |
| Abstract: | The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spec|troscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2×1016 cm?2 were implanted into diamond films at 550°C. UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitrogen, which existed in the excessive nitrogen layers. C(1s) XPS studies show the existence of three different C(1s) bonding states, corresponding to graphite, i-carbon and the carbon of C≡N covalent bonding state, respectively, which agrees well with the Raman results. |
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