a Center for Fundamental Physics, University of Science and Technology of China, Hefei, Anhui 230026, P.R. China
b Department of Materials Science and Engineering, University of Science and Technology, Hefei, Anhui 230026, P.R. China
Abstract:
In this paper, we described an x-ray lithography system composed with an advance high brightness metal plasma source (Z-pinch) producing about 10 J radiation per pulse and 10 mJ/cm2 average x-ray power at 20 cm working distance, and an improved multi-reflecting x-ray lens with 79 mm focus distance and up to 30% transmittance having a modified construction by means of “whole body stretch” techniques. 0.3 μm resist patterns was successfully replicated in x-ray lithography.