微电路pn结瞬态电离辐射响应二维数值模拟

 用增强光电流模型对微电路pn结瞬态电离辐射响应开展了数值模拟计算。该模型在Wirth-Rogers光电流模型的基础上，增加考虑了高注入对过剩载流子寿命的影响以及衬底（准中性区）电场的效应,这些效应对于高阻材料是不容忽视的。该模型对正确预估微电路PN结瞬态电离辐射响应提供了很好的评估手段。

Two-dimensional numerical simulation of microcircuit pn junctions transient radiation response

Transient radiation response for microcircuit pn junctions with enhanced photocurrent models are calculated using two-dimensional numerical simulation. On the basis of Wirth-Rogers photocurrent models, the enhanced models include two additional effects as high injection effects on excess minority carrier lifetime and electric fields in the substrate (quasi-neutral regions). These effects are most pronounced in high resistivity material. An excellent evaluation approach is provided for accurate prediction of transient response of modern microcircuit pn junctions to ionizing radiation.