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Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors |
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| Authors: | Rohit Khanna L. Stafford S.J. Pearton T.J. Anderson F. Ren I.I. Kravchenko Amir Dabiran A. Osinsky Joon Yeob Lee Kwan-Young Lee Jihyun Kim |
| Affiliation: | (1) Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA;(2) Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA;(3) Department of Physics, University of Florida, Gainesville, FL 32611, USA;(4) Department of Chemical and Biological Engineering, College of Engineering, Korea University, Anam-dong 5–1, Sungbuk-gu, Seoul, 136–701, Korea;(5) SVT Associates, Eden Prairie, MN 55344, USA |
| Abstract: | AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB2/Ti/Au source/drain Ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB2/Au or Ni/TiB2/Au) and subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au Ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based Ohmic metal and either Pt/Au, Ni/Au or Ni/TiB2/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C. |
| Keywords: | GaN high electron mobility transistor contacts |
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