CCD强光串扰效应的串扰线缺口现象及其机制

在激光辐照行间转移CCD相机的实验中发现了关于CCD串扰效应的一个新现象,即在串扰线上出现缺口,该缺口紧邻主光斑上侧且随光强增大而减小。基于行间转移面阵CCD的构造和工作过程,利用CCD串扰效应的一种新机制对现象作出了合理的解释。串扰线的形成依赖于在垂直转移动作过程中CCD信号积分势阱中的载流子向垂直转移CCD寄存器中的溢出。串扰线上缺口的出现则是由于CCD的信号积分势阱被读出转移动作清空后再次填满需要经过一定时间,该时间内无信号电荷溢出至转移沟道;读出转移清空存储势阱的时刻是构成主光斑的主体信号电荷按正常时序进入垂直转移CCD寄存器的时刻,故缺口紧邻主光斑的上侧;光强越大,光电子再次填满存储势阱乃至溢出形成串扰线所需要的时间越短,则缺口越小。

Gap on crosstalk line about CCD crosstalk effect induced by intense light and its mechanism

A new phenomenon about crosstalk effect of CCD was discovered in the experiment of laser irradiating the interline transfer CCD camera. It is that a gap, adjoining the upper side of the main spot, appears on the crosstalk line and becomes smaller when laser becomes more intense. Through the analysis on the structure and process of interline transfer CCD image sensor, a new crosstalk mechanism is given to explain the phenomenon. In the process of vertical transfer action, the overflowing of signal charges in integral well to vertical CCD register makes the crosstalk line. When readout transfer action empties the integral well, the integral well needs time to be refilled, during which no signal charge overflows to vertical CCD register. While the main signal charge package that makes the ma