E~2PROM擦/写特性的PCM研究

使用薄隧道氧化层浮栅器件逐渐成为在电可擦除稳定的存储器中一个标准1]，根据E~2PROM工艺特点，本文着重分析了E／W后学元开启电压和E／W时间。E／W电压、隧道扎面积的关系。给出了开发和研究E~2ROM器件模型的工艺评价用PCM及常规用PCM的测试结果，为E~2PROM的工艺开发和实现提供有力的帮助。根据浮栅E~2PROM的物理模型2]，建立了存储单元的阈值电压模型，利用该模型研究了存储单元E／W后同值电压与物理尺寸、E／W电压、E／W时间的关系。通过对这一关系更深入的认识，一方面在单元设计上有利于了解不同类型的E~2PROM，为减小器件尺寸以及今后开发业微米的设计规则作准备；另一方面，在工艺上建立一个准确的单元添件参数模型，得到各层次各关键工序的工艺评价参数，为制造高性能高可靠性的存储单元打下坚实基础。

Researches of E/W characteristics for E~2PROM PCM

Floating-gate MOS devices using thin tunnel oxide are becoming an accept-able standard in electrically erasable nonvolatile memory. Based on the E2PROM processcharacteristic, a PCM testing technology and testing results are given in this paper forstudying and developing this device modle. The exact device model is helpful for us todevelop and manufacture process. Moreover, We study the relations between the Erase/Write threshold voltage of E2PROM cell and the physical size of device E/W times E/W voltage.Based on the physical model of E2PROM, a threshold voltage modle of memoty cellhas been established. We studied relations between the Erase/Write threshold voltage ofmemory cell and physical size of device'E/W voltage'E/W time. Having this relations,one side, we have advantape to acquaint all kinds of E2PROM in design, it's helpful forminifying device size and developing sub-micron desing rule. On the other side, we estab-lished a exact model of device parameter and got process evaluate parameter in the pro-cess, it's the ground work for manufacture high quality and high reliability memoty cell.