| 高压JTE终端边界元电场分析 |
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| 引用本文： | 梁功军 唐本奇. 高压JTE终端边界元电场分析[J]. 固体电子学研究与进展, 1998, 18(1): 79-85 |
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| 作者姓名： | 梁功军 唐本奇 |
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| 作者单位： | 西安交通大学微电子工程系 |
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| 摘 要： | 在半导体高压终端研究中，重要的工作之一是终端电场电位分析。国内外以往报道的JTE分析结果除采用解析方法外，数值方法主要采用差分或有限元法。作者利用边界元数值技术，采用“边界元临界电场分析法”，用自主开发的统一的边界元终端分析软件，从新的角度，以单区、双区JTE为例，详细讨论了新的边界元分析法，研究了极值电场分布等情况，得到了物理概念清晰，描述较准确而又简明直观的优化结果。边界元算法独特，优点显著。现有程序不但可用于JTE终端优化分析设计，还可直接用于场板、JTE加场板等终端结构场分析。
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| 关 键 词： | 数值分析 边界元 结终端技术 |
BEM Analysis of Electric Field in High-voltage JTE |
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| Liang Sujun, Tang Benqi, Wu Zhilu, Luo Jinsheng. BEM Analysis of Electric Field in High-voltage JTE[J]. Research & Progress of Solid State Electronics, 1998, 18(1): 79-85 |
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| Authors: | Liang Sujun Tang Benqi Wu Zhilu Luo Jinsheng |
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| Abstract: | The electric field distribution for investigation of high-voltage termination is one of the most important parameters. The previous JTE results were obtained from the FDM and the FEM besides the analytical method. The authors use anovel numerical technique CEFBEM, Boundary Element Method for analysis ofCritical Electric Field in termination, to calculate the electric and potential fielddistributions along the inner and outer boundaries and make analyses of maximumand peak fields in the JTE termination. This algorithm has many advantages overthe FDM and the FEM and can also be applied for analysis of Field Plate(FP) orJTE with Field Plate termination without any modification. |
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| Keywords: | Numcrical Analysis Boundary Element Method Junction Termination Technique |
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