| 基于低温In_xGa_(1-x)P组分渐变缓冲层的InP/GaAs异质外延 |
| |
| 引用本文： | 刘红兵,王琦,任晓敏,黄永清.基于低温In_xGa_(1-x)P组分渐变缓冲层的InP/GaAs异质外延[J].光电子．激光,2009(7):893-896. |
| |
| 作者姓名： | 刘红兵 王琦 任晓敏 黄永清 |
| |
| 作者单位： | 北京邮电大学光通信与光波技术教育部重点实验室;东华理工大学核工程技术学院; |
| |
| 基金项目： | 国家“863”计划资助项目(2006AA03Z416,2007AA03Z418);;教育部“新世纪人才支持计划”资助项目(NCET-05-0111);;高等学校学科创新引智计划资助项目(B07005);;教育部“长江学者和创新团队发展计划”资助项目(IRT0609) |
| |
| 摘 要： | 采用低温GaAs与低温组分渐变InxGa1-xP作为缓冲层,利用低压金属有机化学气相外延(LP-MOCVD)技术,在GaAs(001)衬底上进行了InP/GaAs异质外延实验。实验中,InxGa1-xP缓冲层选用组分线性渐变生长模式(xIn0.49→1)。通过对InP/GaAs异质外延样品进行双晶X射线衍射(DCXRD)测试,并比较1.2μm厚InP外延层(004)晶面ω扫描及ω-2θ扫描的半高全宽(FWHM),确定了InxGa1-xP组分渐变缓冲层的最佳生长温度为450℃、渐变时间为500s。由透射电子显微镜(TEM)测试可知,InxGa1-xP组分渐变缓冲层的生长厚度约为250nm。在最佳生长条件下的InP/GaAs外延层中插入生长厚度为48nm的In0.53Ga0.47As,并对所得样品进行了室温光致发光(PL)谱测试,测试结果表明,中心波长为1643nm,FWHM为60meV。
|
| 关 键 词： | InP/GaAs异质外延 低压金属有机化学气相外延(LP-MOCVD) InxGa1-xP 组分渐变缓冲层 |
Heteroepitaxial growth of InP/GaAs using low-temperature In_xGa_(1-x)P graded buffers |
| |
| LIU Hong-bing,WANG Qi,REN Xiao-min,HUANG Yong-qing.Heteroepitaxial growth of InP/GaAs using low-temperature In_xGa_(1-x)P graded buffers[J].Journal of Optoelectronics·laser,2009(7):893-896. |
| |
| Authors: | LIU Hong-bing WANG Qi REN Xiao-min HUANG Yong-qing |
| |
| Affiliation: | 1.Key Laboratory of Optical Communication and Lightwave Technologies;Ministry of Education;Beijing University of Posts and Telecommunications;Beijing 100876;China;2.School of Nuclear Engineering and Technology;East China Institute of Technology;Jiangxi 344000 |
| |
| Abstract: | The low temperature GaAs and graded InxGa1-xP buffers were adopted to grow InP on GaAs (001) substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD).The linearly graded growth mode was used to obtain InxGa1-xP buffer (xIn=0.49→1).Different InP/GaAs heteroepitaxial samples were tested with double crystal X-Ray diffraction(DCXRD),and the FWHMof ωand ω-2θscans on 1.2 μm InP epilayer (004) plane was compared.The test results indicate that the optimum growth temperature (Tg) and ramp time of InxGa1-xP graded buffer are 450 ℃and 500 s respectively.The thickness of InxGa1-xP graded buffer is 250 nm according to transmission electron microscope(TEM) measurement.A 48nm In0.53Ga0.47As layer was grown inside the InP epilayer under optimum growth conditions,the room temperature photoluminescence(PL) spectra shows that the band-edge emissions is 1 643 nm,and its FWHMis 60 meV. |
| |
| Keywords: | InP/GaAs heteroepitaxy low pressure MOCVD(LP-MOCVD) InxGa1-xP graded buffer |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《光电子．激光》浏览原始摘要信息 |
|
点击此处可从《光电子．激光》下载全文 |
