| 一款基于65nm CMOS工艺的高效率50GHz 压控振荡器及其电感耦合效应的研究 |
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| 引用本文： | 叶禹,田彤.一款基于65nm CMOS工艺的高效率50GHz 压控振荡器及其电感耦合效应的研究[J].半导体学报,2013,34(7):075001-5. |
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| 作者姓名： | 叶禹 田彤 |
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| 作者单位： | Key Laboratory of Terahertz Solid-State Technology,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;University of Chinese Academy of Sciences;Internet of Things System Technology Laboratory,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences |
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| 基金项目： | 国家物联网技术研究专项基金项目 |
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| 摘 要： | A 50 GHz cross-coupled voltage controlled oscillator(VCO) considering the coupling effect of inductors based on a 65 nm standard complementary metal oxide semiconductor(CMOS) technology is reported.A pair of inductors has been fabricated,measured and analyzed to characterize the coupling effects of adjacent inductors. The results are then implemented to accurately evaluate the VCO’s LC tank.By optimizing the tank voltage swing and the buffer’s operation region,the VCO achieves a maximum efficiency of 11.4%by generating an average output power of 2.5 dBm while only consuming 19.7 mW(including buffers).The VCO exhibits a phase noise of—87 dBc/Hz at 1 MHz offset,leading to a figure of merit(FoM) of-167.5 dB/Hz and a tuning range of 3.8%(from 48.98 to 50.88 GHz).
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| 关 键 词： | CMOS coupling effects inductors LC tank VCO |
A 65 nm CMOS high efficiency 50 GHz VCO with regard to the coupling effect of inductors |
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| Ye Yu and Tian Tong.A 65 nm CMOS high efficiency 50 GHz VCO with regard to the coupling effect of inductors[J].Chinese Journal of Semiconductors,2013,34(7):075001-5. |
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| Authors: | Ye Yu and Tian Tong |
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| Affiliation: | Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100049, China;Internet of Things System Technology Laboratory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | A 50 GHz cross-coupled voltage controlled oscillator (VCO) considering the coupling effect of inductors based on a 65 nm standard complementary metal oxide semiconductor (CMOS) technology is reported. A pair of inductors has been fabricated, measured and analyzed to characterize the coupling effects of adjacent inductors. The results are then implemented to accurately evaluate the VCO's LC tank. By optimizing the tank voltage swing and the buffer's operation region, the VCO achieves a maximum efficiency of 11.4% by generating an average output power of 2.5 dBm while only consuming 19.7 mW (including buffers). The VCO exhibits a phase noise of -87 dBc/Hz at 1 MHz offset, leading to a figure of merit (FoM) of -167.5 dB/Hz and a tuning range of 3.8% (from 48.98 to 50.88 GHz). |
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| Keywords: | CMOS coupling effects inductors LC tank VCO |
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