100 W C-band single-chip GaN FET power amplifier |
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| Authors: | Okamoto Y Wakejima A Ando Y Nakayama T Matsunaga K Miyamoto H |
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| Affiliation: | R&D Assoc. for Future Electron Devices, NEC Corp., Otsu Shiga, Japan; |
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| Abstract: | A single-chip GaN-FET amplifier exhibits record output powers of C-band solid-state amplifiers under continuous-wave (CW) and pulsed operation conditions. At 5.0 GHz, the developed GaN-FET amplifier with 24 mm gate periphery delivered a CW 100 W output power with 12.9 dB linear gain and 31% power-added efficiency and a pulsed 155 W output power with 13.0 dB linear gain. |
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