| 反应离化团束（RICB）法生长CN硬质薄膜 |
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| 引用本文： | 谢俊清,冯嘉猷,郑毅. 反应离化团束（RICB）法生长CN硬质薄膜[J]. 材料研究学报, 1996, 10(5): 525-528 |
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| 作者姓名： | 谢俊清 冯嘉猷 郑毅 |
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| 作者单位： | 清华大学 |
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| 摘 要： | 用反应离化团束（ＲＩＣＢ）法，以低分子量聚乙烯为蒸发材料，氨气为反应气体，在ＮａＣｌ（１００）和Ｓｉ（１００）衬底上淀积Ｃ－Ｎ薄膜，透射电子衍射（ＴＥＭ）分析表明薄膜中含有β－Ｃ３Ｎ４晶粒，Ｘ射线光电子谱（ＸＰＳ）和红外吸收谱（ＩＲ）表明存在Ｃ，Ｎ原子的化学键合。
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| 关 键 词： | 离化团束 C－N薄膜 薄膜 |
| 收稿时间： | 1996-10-25 |
| 修稿时间： | 1996-10-25 |
CARBON NITRIDE FILMS DEPOSITED BY REACTIVE IONIZED CLUSTER BEAM METHOD |
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| XIE Junqing,FENG Jiayou,ZHENG Yi.. CARBON NITRIDE FILMS DEPOSITED BY REACTIVE IONIZED CLUSTER BEAM METHOD[J]. Chinese Journal of Materials Research, 1996, 10(5): 525-528 |
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| Authors: | XIE Junqing FENG Jiayou ZHENG Yi. |
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| Affiliation: | Tsinghua University |
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| Abstract: | Carbon nitride thin films have been prepared by reactive ionized cluster beam (RICB)technique on Si(100)and NaCl(100) substrates, using low molecular weight polyethylene as evaporation material and ammonia as reactive gas. As revealed by transmission elec |
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| Keywords: | ionized cluster beam carbon nitride films |
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