双界面智能卡芯片模拟前端ESD设计

双界面智能卡芯片静电放电(ESD)可靠性的关键是模拟前端(AFE)模块的ESD可靠性设计,如果按照代工厂发布的ESD设计规则设计,AFE模块的版图面积将非常大.针对双界面智能卡芯片AFE电路结构特点和失效机理,设计了一系列ESD测试结构.通过对这些结构的流片和测试分析,研究了器件设计参数和电路设计结构对双界面智能卡芯片ESD性能的影响.定制了适用于双界面智能卡芯片AFE模块设计的ESD设计规则,实现对ESD器件和AFE内核电路敏感结构的面积优化,最终成功缩小了AFE版图面积,降低了芯片加工成本,并且芯片通过了8 000 V人体模型(HBM) ESD测试.

ESD Design of the Analog Front End in the Dual-Interface Smart Card Chip

The electrostatic discharge (ESD) reliability design of the analog front end (AFE) module is the key of the dual-interface smart card chip ESD reliability.The AFE module layout size will be very large if it is designed in accordance with the ESD design rule released by the factory.A series of ESD test structures were designed according to the structure characteristic and failure mechanism of the AFE circuit in the dual-interface smart card chip.Through the fabrication and test analysis of these structures,the influences of device design parameters and circuit design structures on the ESD performance of the dual-interface smart card chip were studied.An ESD design rule for the dual-interface smart card chip AFE module design was customized.Through this rule,the layout size of the ESD device and AFE core circuit sensitive structure are optimized.Finally,the AFE layout size is successfully minimized and the chip processing cost is also reduced.In addition,the chip passes the 8 000 V human body model (HBM) ESD test.