| 溅射非晶钴硅薄膜的晶化过程及其分析 |
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| 引用本文： | 李伟,徐昌学,姜传海,吴建生.溅射非晶钴硅薄膜的晶化过程及其分析[J].理化检验(物理分册),2006,42(4):163-166. |
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| 作者姓名： | 李伟 徐昌学 姜传海 吴建生 |
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| 作者单位： | 1. 上海交通大学材料科学与工程学院,高温材料及高温测试教育部重点实验室,上海,200030
2. 中国石油天然气管道科学研究院,廊坊,065000 |
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| 基金项目： | 国家自然科学基金（50131030）,上海AM基金（0211） |
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| 摘 要： | 利用射频磁控溅射方法制备了具有CoSi2成分的非晶薄膜，对非晶薄膜的晶化过程进行了原位X射线分析。结果显示，溅射态薄膜为非晶态，而自由能一成分曲线说明非晶态合金有较低自由能。在非晶晶化过程中初生相为CoSi相，其形成由有效形成热（EHF）因素和结构因素决定。随加热温度升高，非晶薄膜晶化最终得到晶体CoSi2薄膜。
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| 关 键 词： | 非晶钴硅薄膜 X射线分析 自由能曲线 |
| 文章编号： | 1001-4012（2006）04-0163-04 |
| 收稿时间： | 2005-10-28 |
| 修稿时间： | 2005-10-28 |
CRYSTALLIZATION PROCESS AND ITS ANALYSIS OF AMORPHOUS Co-Si FILM PREPARED BY SPUTTERING |
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| LI Wei,XU Chang-xue,JIANG Chuan-hai,WU Jian-sheng.CRYSTALLIZATION PROCESS AND ITS ANALYSIS OF AMORPHOUS Co-Si FILM PREPARED BY SPUTTERING[J].Physical Testing and Chemical Analysis Part A:Physical Testing,2006,42(4):163-166. |
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| Authors: | LI Wei XU Chang-xue JIANG Chuan-hai WU Jian-sheng |
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| Affiliation: | 1. Key Laboratory for High Temperature Materials and Tests of Ministry of Education, School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai 200030, China; 2. Pipeline Research Institute of CNPC, Langfang 065000, China |
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| Abstract: | Crystallization process of CoSi2 thin films prepared by radio frequency magnetron sputtering have been investigated by in situ X-ray diffraction. The results show that the as-deposited Co-Si film is amorphous. The gibbs free energy-composition curve proved that amorphous phase has lower Gibbs free energy. The first formed phase during crystallization is CoSi phase, its formation is determined by EHF (effective heat of formation) and structure factors. As the temperature was elevated, the amorphous thin film finally transformed to crystalline CoSi2. |
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| Keywords: | Amorphous Co-Si film X-ray diffraction Gibbs free energy curve |
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