| 红外辐照退火硼离子注入硅的后热处理特性研究 |
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| 引用本文： | 范永平,罗晋生. 红外辐照退火硼离子注入硅的后热处理特性研究[J]. 固体电子学研究与进展, 1990, 0(2) |
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| 作者姓名： | 范永平 罗晋生 |
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| 作者单位： | 西安交通大学电子工程系(范永平)，西安交通大学电子工程系(罗晋生) |
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| 摘 要： | 本文研究了硼离子注入硅经红外辐照退火后的热处理特性.实验发现,对于20keV,3.5×10~(14)cm~(-2)~(11)B离子注入硅样品,经10秒到几十秒红外辐照后再进行不同温度的后热处理,表面薄层电阻随退火温度呈规律性变化,在1050℃附近达到最小值,此时杂质的电激活率大于100%.
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Thermal Post-Treatment for Infrared Rapid Isothermal Annealed ~(11)B-Implanted Silicon |
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| Abstract: | In this paper,thermal post-treatment for infrared rapid isothermal annealed boron-implanted silicon was studied. The results show that the sheet resistivity of the sample changes regularly with the temperature of the thermal post-treatment and reaches the minimum at about 1050℃, with the activation of the implanted dopant being greater than 100%. |
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