| Si~(4+)掺杂对BaZr(BO_3)_2:Eu荧光粉能量传递的影响 |
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| 引用本文： | 张忠朋. Si~(4+)掺杂对BaZr(BO_3)_2:Eu荧光粉能量传递的影响[J]. 上海电力学院学报, 2010, 0(12) |
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| 作者姓名： | 张忠朋 |
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| 作者单位： | 天津理工大学材料物理研究所显示材料与光电器件教育部重点实验室天津市光电显示材料与器件重点实验室; |
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| 基金项目： | 天津市自然科学基金资助项目(07JCYBJC06400,09JCYBJC01400); 天津市高等学校科技发展基金计划资助项目(20071207) |
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| 摘 要： | 采用高温固相法合成了Si4+掺杂的BaZr(BO3)2:Eu红色发光荧光粉。激发光谱表明,不同Si4+掺杂浓度明显使电荷迁移态(CTS)向高能量的位置移动,且改善了样品的发光强度。分析认为,这是由于Si4+的电负性大于所取代的Zr4+,且Si4+的进入影响了Eu3+的配位数,提高了CTS向发光中心的能量传递几率。依据Judd-Ofelt理论计算的强度参数表明,随着Si4+掺杂浓度的增加,Eu3+所处格位的对称性明显降低,增大了Eu3+的跃迁几率,从而改善了发光强度。计算Eu3+间的能量传递几率发现,在掺杂浓度为5%时,Eu3+间的能量传递几率很小,其对荧光粉的发光影响不大。
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| 关 键 词： | BaZr(BO3)2:Eu荧光粉 电荷迁移态(CTS) 强度参数 能量传递 |
Influence of Si~(4+) doping on energy-transfer of Eu~(3+) ions in BaZr(BO_3)_2 phosphors |
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| ZHANG Zhong-peng. Influence of Si~(4+) doping on energy-transfer of Eu~(3+) ions in BaZr(BO_3)_2 phosphors[J]. Journal of Shanghai University of Electric Power, 2010, 0(12) |
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| Authors: | ZHANG Zhong-peng |
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| Affiliation: | The Tianjin Key Laboratory for Optoelectronic Materials , Devices,Key Laboratory of Display Materials , Photoelectric Devices,Ministry of Education,Institute of Material Physics,Tianjin University of Technology,Tianjin 300191,China, |
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| Abstract: | Si4+-doped BaZr(BO3)2:Eu3+ phosphors are prepared by a conventional solid-state reaction method.Because of the stronger electronegativity of Si4+ than Zr4+,the charge transfer state(CTS) of Eu3+-O2-shifts to higher energy location when Zr4+ is substituted by Si4+.The doping of Si4+ ion decreases the coordination number of Eu3+,which improves the energy transfer rates between Eu3+ and O2-.The intensity parameters calculated according to Judd-Ofelt theory show that the Eu3+ ion is located in a more asymmetric... |
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| Keywords: | BaZr(BO3)2:Eu phosphor charge transfer state(CTS) intensity parameter energy-transfer |
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