| 一种GaN宽禁带功率放大器的设计 |
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| 引用本文： | 张方迪,张民,叶培大. 一种GaN宽禁带功率放大器的设计[J]. 现代电子技术, 2010, 33(13): 45-47,50 |
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| 作者姓名： | 张方迪 张民 叶培大 |
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| 作者单位： | 1. 华东电子工程研究所,安徽合肥,230031
2. 北京邮电大学电信工程学院信息光子学与光通信教育部重点实验室,北京,100876 |
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| 基金项目： | 国家863资助课题项目 |
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| 摘 要： | 氮化镓（GaN）作为第三代半导体材料的典型代表之一，由于其宽带隙、高击穿电场强度等特点，被认为是高频功率半导体器件的理想材料。为研究GaN功率放大器的特点，基于Agilent ADS仿真软件，利用负载／源牵引方法设计制作了一种Si波段GaN宽禁带功率放大器（10W）。详细说明了设计步骤并对放大器进行了测试，数据表明放大器在2．3～2．4GHz范围内可实现功率超过15W，附加效率超过67％的输出。实验结果证实，GaN功率放大器具有高增益、高效率的特点。
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| 关 键 词： | 宽禁带半导体 功率放大器 附加效率 GaN |
Design of GaN Wide-bandgap Power Amplifier with High Efficiency |
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| ZHANG Fang-di,ZHANG Min,YE Pei-da. Design of GaN Wide-bandgap Power Amplifier with High Efficiency[J]. Modern Electronic Technique, 2010, 33(13): 45-47,50 |
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| Authors: | ZHANG Fang-di ZHANG Min YE Pei-da |
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| Affiliation: | 1. East China Research Institute of Electronic Engineering, Heifei 230031, China; 2. Key Lab of Information Photonics and Optical Communications, Ministry of Education, School of Telecommunication Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China) |
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| Abstract: | GaN as one typical representative of the third generation semiconductor materials is considered to be a perfect candidate for high-frequency semiconductor power devices due to its features such as wide bandgap and high critical electric field. By using a loadpull/sourepull method, a S-band GaN wide-bandgap power amplifier （10 W） is designed and fabricated based on the Agilent ADS software to investigate the properties of GaN power amplifier. The design procedure for the power amplifier is illustrated in detail. The power amplifier was tested. The test results show that the output power over 15W and power added efficiency （PAE） above 67% can be realized by the designed amplifier at the range of 2.3-2.4 GHz, and prove that the GaN wide-bandgap power device has the characteristics of high gain and high efficiency. |
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| Keywords: | GaN |
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