| 钴基非晶丝应力电阻抗效应 |
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| 引用本文： | 鲍丙豪.钴基非晶丝应力电阻抗效应[J].传感器与微系统,2001,20(8):44-45,48. |
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| 作者姓名： | 鲍丙豪 |
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| 作者单位： | 安徽机电学院应用数理系, |
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| 基金项目： | 国家非晶微晶工程研究中心资助项目;1998.03; |
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| 摘 要： | 研究了钴基非晶丝材料显示的应力电阻抗 (SI)效应。结果表明 ,淬态钴基非晶丝在其两端受到外加轴向压力作用下可呈现显著的应力电阻抗效应 ,它与驱动电流频率及幅值均有关
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| 关 键 词： | 钴基非晶丝 应力电阻抗 驱动电流 |
| 文章编号： | 1000-9787(2001)08-0044-02 |
Stress impedance effect in Co-based amorphous wire |
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| BAO Bing,hao.Stress impedance effect in Co-based amorphous wire[J].Transducer and Microsystem Technology,2001,20(8):44-45,48. |
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| Authors: | BAO Bing hao |
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| Abstract: | The stress impedance (SI) effect in Co based amorphous wire is studied.The results show that the as quenched Co based amorphous wire appear giant SI effect when both ends of the amorphous wire are applied external axial compression force. The effect is related to the frequency and the amplitude of the driving current. |
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| Keywords: | Co based amorphous wire stress impedance driving current |
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