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Oscillation of the scattering time in a 2D electron system with oval antidots |
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| Authors: | G M Gusev X Kleber U Gennser D K Maude J C Portal D I Lubyshev P Basmaji M de P A Silva J C Rossi Yu V Nastaushev M R Baklanov |
| Affiliation: | a Laboratoire des Champs Magnetiques Intenses, CNRS, F-38042, Grenoble, France b INSA-, Toulouse, 31077, France c Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, SP, Brazil d Universidade Federal de Sao Carlos, Brazil e Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, Russia |
| Abstract: | Electron scattering by a single barrier is predicted to reveal singularities as the magnetic field is changed, because the number of electron collisions with the barrier dramatically increases as chaotic orbits around the barrier are changed into periodic orbits. To test this experimentally we have measured the magnetoresistance of AlGaAs/GaAs heterostructures with a two-dimensional electron gas and a lateral lattice containing a macroscopic number of oval-shaped antidots fabricated using electron lithography. Reproducible fluctuations in the magnetoresistance are observed at low field, which are due to the oscillations of the number of electron collisions with the antidots. The number of collisions N before the electron escapes from the antidot has been calculated as a function of B in an electric field. The position of the maxima in N(B) obtained from calculations and experiment are in reasonable agreement. |
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