Formation process of Al2O3 thin film by reactive sputtering |
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| Authors: | Y Chiba M Kawamura K Sasaki |
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| Affiliation: | Department of Materials Science, Kitami Institute of Technology, 165 Koen-cho, Kitami, 090-8507, Japan |
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| Abstract: | Al and Al2O3 films were deposited by RF magnetron sputtering using a mixed gas of Ar and O2. The surface of the Al target was changed from the metallic mode to the oxide mode at a critical O2 flow ratio of 8%. The atomic ratio of sputtered Al atoms to supplied oxygen atoms was found to be approximately 2:3 at the critical O2 flow ratio. The oxide layer thickness formed on the Al target was estimated to be 5-7 nm at an O2 flow ratio of 100% by ellipsometry. |
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| Keywords: | Reactive sputtering Plasma emission intensity Target voltage Aluminum oxide Gettering effect |
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