高介电常数Ta/Al2O3复合膜的制备及性能研究

首次在溴的丙酮溶液中,以钽为阳极,氧化铝为阴极,通过直流电沉积方法制备了Ta/Al_2O_3复合膜。借助LCR数字电桥、SEM、EDS等测试手段对Ta/Al_2O_3复合膜的介电性能及微观结构进行了分析与表征。研究表明:Ta/Al_2O_3复合氧化膜的表面沉积了质量分数为41.77%的钽。与普通铝阳极(Al_2O_3)氧化膜相比,复合氧化膜的电容提高了50%以上,这主要归因于介电常数较高的钽在复合氧化膜表面的沉积。

Preparation and properties of high permittivity Ta/Al2O3 composite film

Ta/Al2O3 composite film was prepared for the first time using the direct current electrodeposition method, with the acetone solution of bromine as the electrolyte, aluminum oxide (Al2O3) film as the cathode substrate and tantalum piece as the anode. The dielectric properties and microstructure of the composite film were studied with LCR digital electric bridge, SEM and EDS. The results show that there is Ta depositing on the surface of the composite film and the content of Ta is 41.77%(mass fraction). The capacitance of the composite film is increased by more than 50% in comparison to the capacitance of the pure Al2O3 film, resulting form the presence of high permitivity Ta in the composite film.