Time-resolved spectroscopy of intrinsic luminescence of Y3Ga5O12 and (LaLu)3Lu2Ga3O12 single crystals |
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| Affiliation: | 1. Laboratory of Optoelectronic Materials, Electronics Department, Ivan Franko National University of Lviv, 107 Gen. Tarnavsky Str., 79017 Lviv, Ukraine;2. Physical Department, Ivan Franko National University of Lviv, Kyryla i Mefodia Str. 8, 79005 Lviv, Ukraine;3. Institute of Experimental Physics, University of Gdansk, Wita Stwosza 57, 80-952 Gdansk, Poland;4. Institute of Technology of Electronic Materials (ITME), Wólczyńska 133, 01-919 Warsaw, Poland;1. Institute of Experimental Physics, University of Gdansk, Poland;2. Institute of Physics, Polish Academy od Science, Warsaw, Poland;3. Institute of Physics, N. Copernicus University, Torun, Poland;4. Institute of Experimental Physics, University of Gdansk, Poland;1. Fujian Key Laboratory of Advanced Materials, Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005, China;2. Fujian Engineering Research Center for Solid-State Lighting, Department of Electronic Science, Xiamen University, Xiamen 361005, China;3. Advanced Materials Processing and Analysis Center, Department of Materials Science and Engineering, University of Central Florida, Orlando, FL 32816, USA;1. State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123,China;2. Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering, Pukyong National University, Busan 608-737, Republic of Korea;1. Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;2. Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan;3. Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-Cho, Ikoma, Nara 630-0192, Japan;1. Departamento de Química, Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, Av. Bandeirantes, 3900, CEP 14040-901 Ribeirão Preto, SP, Brazil;2. Instituto de Engenharia de Várzea Grande, Universidade Federal de Mato Grosso, Várzea Grande, Brasil |
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| Abstract: | The nature of intrinsic luminescence of Y3Ga5O12 (YGG) and (LaLu)3Lu2Ga3O12 (LLGG) single crystals grown from a melt was determined. In the case of a YGG single crystal containing YGa antisite defects with a concentration of 0.25–0.275 at.% the intrinsic luminescence was considered as a superposition of luminescence of self-trapped excitons (STE), luminescence of excitons localized near antisite defects (LE(AD) centers) and luminescence caused by a recombination of an electron with a hole captured at YGa antisite defects. Due to a large (2–3%) concentration of LuLa antisite defects in LLGG single crystals the intrinsic luminescence was a superposition mainly of the LE(AD) center emission and the recombination luminescence of LuLa antisite defects. The energy structure of the mentioned centers in YGG and LGGG hosts was determined from the excitation spectra of their luminescence under excitation by synchrotron radiation in the range of the fundamental absorption edge of these garnets. |
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