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Laser-annealing-induced features of the Raman spectra of quartz/Si and glass/Si structures |
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| Authors: | R. V. Konakova A. F. Kolomys O. B. Okhrimenko V. V. Strelchuk A. M. Svetlichnyi M. N. Grigoriev B. G. Konoplev |
| Affiliation: | 1. Lashkaryov Insitute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, 03028, Ukraine 2. Taganrog Institute of Technology, Southern Federal University, Taganrog, 347928, Russia |
| Abstract: | The effect of laser radiation on the characteristics of amorphous silicon films on glassy or quartz substrates are studied by Raman spectroscopy. It is established that an increase in the laser-treatment power yields a phase transition from amorphous silicon to nanocrystalline silicon. The variation in the relation between the nanocrystalline and amorphous silicon fractions in the films is described in the context of the critical impact model. |
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