Effect of silane flow rate on structural,electrical and optical properties of silicon thin films grown by VHF PECVD technique |
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Authors: | Jhuma Gope Sushil Kumar S. Sudhakar C.M.S. Rauthan P.C. Srivastava |
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Affiliation: | 1. Physics of Energy Harvesting Division, CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012, India;2. Department of Physics, Banaras Hindu University, Varanasi 221005, India |
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Abstract: | Hydrogenated silicon thin films deposited by VHF PECVD process for various silane flow rates have been investigated. The silane flow rate was varied from 5 sccm to 30 sccm, maintaining all other parameters constant. The electrical, structural and optical properties of these films were systematically studied as a function of silane flow rate. These films were characterized by Raman spectroscopy, Scanning Electron Microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy and UV–visible (UV–Vis) spectroscopy. Different crystalline volume fraction (22%–60%) and band gap (∼1.58 eV–∼1.96 eV) were achieved for silicon thin films by varying the silane concentration. A transition from amorphous to nanocrystalline silicon has been confirmed by Raman and FTIR analysis. The film grown at this transition region shows the high conductivity in the order of 10−4 Ω−1 cm−1. |
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Keywords: | Thin films Plasma deposition Fourier transform infrared spectroscopy (FTIR) Raman spectroscopy and scattering |
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