| 金属-半导体转变的研究现状及应用前景 |
| |
| 引用本文： | 柯才军,陈西曲.金属-半导体转变的研究现状及应用前景[J].科学技术与工程,2009,9(15). |
| |
| 作者姓名： | 柯才军 陈西曲 |
| |
| 作者单位： | 1. 中国三江航天集团设计所,武汉,430034
2. 武汉工业学院数理系,武汉,430023 |
| |
| 摘 要： | 20世纪60年代理论预言金属-半导体转变,但在随后的30年间实验研究未获进展,直到20世纪90年代才取得了飞速发展.Ⅳ族金属元素Sn、Pb和Ⅴ族金属元素Sb、Bi的外延膜先后观察到了金属-半导体转变,并提出了"空穴导电"模型,取代以往的"电荷中性"模型.在超细金属微粒的研究上,由于金属能带转变为半导体禁带能隙结构,发现了很多相应的、与块状金属不同的光、电、磁、热、力学和化学特性,有力地推动了学科的发展.
|
| 关 键 词： | 金属-半导体转变 量子尺寸效应 空穴导电模型 纳米效应 |
Present Status and Potential Applications for Metal-semiconductor Transition |
| |
| KE Cai-jun,CHEN Xi-qu.Present Status and Potential Applications for Metal-semiconductor Transition[J].Science Technology and Engineering,2009,9(15). |
| |
| Authors: | KE Cai-jun CHEN Xi-qu |
| |
| Affiliation: | The Design Institute for Sanjiang Aero-space Group of China;Wuhan 430034;P.R.China;Wuhan Institute of Technology;Dept.of Mathematical Physics1;Wuhan 430023;P.R.China |
| |
| Abstract: | The possibility of a metal to semiconductor transition was theoretically predicated over 30 years ago,however,the transition had never been experimentally identified before 1990. The metal-semiconductor transition in Sn,Pb,Sb and Bi ultrathin films were discoveried in the last 20 years,and a hole conductivity model was provided instead of the charge neutral model. A transition of metal energy band to semiconductor one in nanometal particles arouses a lot of new properties different from the relative bulk ma... |
| |
| Keywords: | metal-semiconductor transition quantum size effects hole conductivity model nanostructured effects |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
