| 一种全新的超高速双极ECL硅工艺—氧化物隔离等平面S（Z） |
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| 引用本文： | 李荣强. 一种全新的超高速双极ECL硅工艺—氧化物隔离等平面S（Z）[J]. 微电子学, 1990, 20(2): 57-62 |
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| 作者姓名： | 李荣强 |
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| 作者单位： | 四川固体电路研究所 |
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| 摘 要： | 氧化物隔离等平面S(z)工艺采用全离子注入工艺代替原始的扩散工艺,使得整个工艺流程更为简化,对于浅结工艺的重复性和均匀性均有较大提高。发射极条和基极条形成自对准,发射极四周靠墙。发射极条宽为3微米时,f_γ>3GHz。该工艺已应用于超高速双极ECL分频器中。
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| 关 键 词： | 离子注入 氧化物隔离 双极ECL |
Oxide Isolated Isopianar S(z): A Novel Silicon Technology for Very High Speed Bipolar ECL Devices |
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| Li Rongqiang. Oxide Isolated Isopianar S(z): A Novel Silicon Technology for Very High Speed Bipolar ECL Devices[J]. Microelectronics, 1990, 20(2): 57-62 |
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| Authors: | Li Rongqiang |
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| Affiliation: | Sichuan Institute of Solid-State Circuits |
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| Abstract: | Described in this paper is an oxide isolated isoplanar S(z) technology, in which the all ion implantation process is used to replace the original diffusion process, and thus the whole process flow is made simpler and the repeatibility and uniformity for the shallow junction process are significantly improved. This technology has been applied to very high speed bipolar ECL frequency dividers. |
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| Keywords: | Very high speed bipolar ECL Oxide isolation All ion implantation technology |
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