| 残余氧对TiN+Si3N4纳米复合薄膜硬度的影响 |
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| 引用本文： | 马大衍,马胜利,徐可为,S.Veprek.残余氧对TiN+Si3N4纳米复合薄膜硬度的影响[J].金属学报,2004,40(10):1037-1040. |
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| 作者姓名： | 马大衍 马胜利 徐可为 S.Veprek |
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| 作者单位： | 1. 西安交通大学金属材料强度国家重点实验室,西安,710049
2. Institute for Chemistry of Inorganic Materials,Technical University Munich,Lichten-bergst.4,D-85747 Garching,Munich,Germany |
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| 基金项目： | 国家高技术研究发展计划项目2001AA338010;国家自然科学基金项目50271053,50371067;教育部博士点基金项目;中德重点实验室合作项目20033007资助 |
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| 摘 要： | 用直流等离子体增强化学气相沉积设备在不锈钢表面沉积纳米晶TiN和纳米非晶Si3N4复相薄膜．主要研究了氧元素对薄膜硬度的影响．结果表明，薄膜中极其微量的氧含量就会使nc—TiN α-SiaN4薄膜的硬度大幅降低．薄膜中氧含量小于0.2％(原子分数)，薄膜硬度可以达到45～55GPa，而氧含量升至1％—1．5％后，薄膜硬度降至30GPa左右．其原因与晶界处形成SiOx相有关。
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| 关 键 词： | PCVD TiN Si3N4 薄膜 硬度 氧含量 |
| 文章编号： | 0412-1961(2004)10-1037-04 |
| 收稿时间： | 2003-11-28 |
| 修稿时间： | 2004-04-06 |
Impact of Residual Oxygen on Hardness of Nano Structured TiN+Si3N4 Film |
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| MA Dayan,MA Shengli,XU Kewei,S.Veprek.Impact of Residual Oxygen on Hardness of Nano Structured TiN+Si3N4 Film[J].Acta Metallurgica Sinica,2004,40(10):1037-1040. |
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| Authors: | MA Dayan MA Shengli XU Kewei SVeprek |
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| Abstract: | Using direct current plasma enhanced chemical vapor
deposition (PCVD) techniques, the
nanocomposite films of nc-TiN + a-Si3N4
were synthesized. The detrimental effects of residual
oxygen on the films hardness were explored. A minor
content of residual oxygen can strongly
decrease the hardness of the superhard film.
Oxygen impurity of 1%-1.5% (atomic fraction) can make the
hardness of film decrease to about 30 GPa as compared to
45-55 GPa for the film with below 0.2% oxygen, which is related to
the formation of SiOx at interface of crystalline. |
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| Keywords: | PCVD TiN Si3N4 film hardness oxygen content |
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