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CMOS亚阈值特性的低频低压微功耗电路的设计与模拟
引用本文:王正宏,凌燮亭. CMOS亚阈值特性的低频低压微功耗电路的设计与模拟[J]. 电子学报, 2001, 29(3): 380-382
作者姓名:王正宏  凌燮亭
作者单位:复旦大学专用集成电路与系统国家重点实验室,上海 200433
摘    要:工作在亚阈值状态的MOS晶体管具有极小的工作电流和类似于双极型晶体管的指数特性,因此适合于实现微功耗的外部线性内部非线性电流型电路.为了适合于低电源电压的运用,本文给出了一种新型的电流型四象限乘法器以及滤波器,振荡器等基本单元电路,并利用标准0.6-μm CMOS的工艺参数以锁相环为例进行了性能模拟验证.

关 键 词:亚阈值特性  外部线性内部非线性电路  模拟乘法器  
文章编号:0372-2112 (2001) 03-0378-05
收稿时间:2000-01-10

The Design and Simulation of Low Frequency Low-Voltage Micro-Power Subthreshold CMOS Circuits
WANG Zheng-hong,LING Xie-ting. The Design and Simulation of Low Frequency Low-Voltage Micro-Power Subthreshold CMOS Circuits[J]. Acta Electronica Sinica, 2001, 29(3): 380-382
Authors:WANG Zheng-hong  LING Xie-ting
Affiliation:ASIC & Systems State Key Lab,Fudan University,Shanghai 200433,China
Abstract:Due to their micro operating current and exponential nature,the subthreshold MOS transistors are suitable to implement current-mode micro-power externally linear circuits.In this paper,a novel current-mode four-quadrant multiplier is proposed and the design techniques and considerations on basic modules for low-voltage micro-power applications,such as filters,oscillators,etc.,are given.To verify the performance,a PLL is designed and simulated as an example with the model of standard 0.6μm 5V CMOS process.
Keywords:subthreshold circuits  externally linear internally nonlinear circuits  analog multiplier
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