| 钛酸锶钡/铋锌铌多层复合薄膜的制备及性能 |
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| 引用本文： | 阎鑫,任巍. 钛酸锶钡/铋锌铌多层复合薄膜的制备及性能[J]. 电子元件与材料, 2011, 30(4): 21-24 |
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| 作者姓名： | 阎鑫 任巍 |
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| 作者单位： | 长安大学材料科学与工程学院;西安交通大学电子陶瓷与器件教育部重点实验室;深圳大学特种功能材料重点实验室; |
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| 基金项目： | 国家自然科学基金资助项目(No.50572086); 中央高校基本科研业务费专项资金资助(No.CHD2009JC010); 深圳大学深圳市特种功能材料重点实验室开放基金资助项目(No.T201009) |
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| 摘 要： | 采用溶胶一凝胶法在Pt/Ti/SiO2/Si衬底上制备了钛酸锶钡/铋锌铌多层复合薄膜样品.研究了不同退火温度下多层复合薄膜的结构、微观形貌及介电性能.结果表明:在退火温度高于700℃时,所得复合薄膜中会出现立方焦绿石结构的铋锌铌和钙钛矿结构的钛酸锶钡.750℃退火处理得到的多层复合薄膜,表面致密,无裂纹,其相对介电常数...
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| 关 键 词： | 微波介质薄膜 钛酸锶钡 铋锌铌 溶胶-凝胶法 |
Preparation and dielectric properties of Ba_(0.5)Sr_(0.5)TiO_3/Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 multilayer composite films |
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| YAN Xin,REN Wei. Preparation and dielectric properties of Ba_(0.5)Sr_(0.5)TiO_3/Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 multilayer composite films[J]. Electronic Components & Materials, 2011, 30(4): 21-24 |
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| Authors: | YAN Xin REN Wei |
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| Affiliation: | YAN Xin1,2,3,REN Wei2(1.School of Materials Science and Engineering,Chang'an University,Xi'an 710064,China,2.Electronic Materials Research Laboratory,Key Laboratory of the Ministry of Education,Xi'an Jiaotong University,Xi'an 710049,3.Shenzhen Key Laboratory of Special Functional Materials,Shenzhen University,Shenzhen 518060,Guangdong Province,China) |
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| Abstract: | Ba0.5Sr0.5TiO3/Bi1.5Zn1.0Nb1.5O7(BST/BZN) multilayer composite films were prepared on Pt/Ti/SiO2/Si substrates by the sol-gel method.The structures,microscopic morphologies and dielectric properties of BST/BZN multilayer composite films annealed at different temperatures were studied.The results show that perovskite BST phase and cubic pyrochlore BZN phase can be found in the prepared multilayer composite films annealed at above 700 ℃.The BST/BZN multilayer composite film annealed at 750 ℃ shows a compact and crack-free surface,while its dielectric permittivity and dielectric loss are 146 and 0.004,respectively.In addition,at 10 kHz and 6×105 V/cm,its dielectric tunability and figure of merit(FOM,defined as the ratio of dielectric tunability and dielectric loss at room temperature) reach 13% and 32.5,respectively. |
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| Keywords: | microwave dielectric thin films Ba0.5Sr0.5TiO3/Bi1.5Zn1.0Nb1.5O7 sol-gel method |
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