| 逆F类高效氮化镓Doherty射频功率放大器设计* |
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| 引用本文： | 王 洋,刘太君,叶 焱,孙 超.逆F类高效氮化镓Doherty射频功率放大器设计*[J].微波学报,2014,30(6):64-68. |
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| 作者姓名： | 王 洋 刘太君 叶 焱 孙 超 |
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| 作者单位： | (1. 宁波大学信息科学与工程学院,宁波315211;2. 深圳三星通信技术研究院深圳518000) |
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| 基金项目： | 国家自然科学基金(61171040);浙江省自然科学基金(Y1101270);宁波大学学科项目(XKL141038) |
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| 摘 要： | 逆F 类功放在接近饱和区工作时效率很高,将其与Doherty 功放结构相结合,可以实现一种在大功率回退的情况下仍然具有很高效率的射频功率放大器。本文设计了一款基于GaN HEMT 晶体管的高效率的逆F 类Doherty 功率放大器,工作频带为910MHz-950MHz。单音信号测试结果显示,在930MHz 处,功放回退7.5dB 后漏极效率仍高达64.2%。使用3 载波WCDMA信号作为测试信号,利用数字预失真技术进行线性化后,功放输出信号的上下边带邻信道功率比(ACPR)分别为-35.39dBc 和-35.9dBc。
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| 关 键 词： | Doherty 功率放大器 氮化镓 逆F类 高效率 |
Design of Inverse Class-F High-Efficiency GaN Doherty RF Power Amplifier |
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| WANG Yang,LIU Tai-jun,YE Yan,SUN Chao.Design of Inverse Class-F High-Efficiency GaN Doherty RF Power Amplifier[J].Journal of Microwaves,2014,30(6):64-68. |
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| Authors: | WANG Yang LIU Tai-jun YE Yan SUN Chao |
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| Affiliation: | (1. College of Information Science and Engineering, Ningbo University, Ningbo 315211, China;
2. Samsung Communication Research Institute in Shenzhen,Shenzhen 518000,China) |
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| Abstract: | Inverse class F power amplifier (IFPA) can obtain high efficiency when working close to the saturated
state. By combining the IFPA with Doherty structure, a RF power amplifier characterized with high efficiency at huge power back-off region can be achieved. This paper presents the design and implementation of an inverse class F Doherty power amplifier using a GaN HEMT transistor, which is designed at the band of 910MHz-950MHz. From the measured results for a 930MHz single tone, the drain efficiency of 64.2% is achieved at a 7. 5 dB back-off point from its saturated output power. Taking three-carrier WCDMA signal as a test signal, the proposed power amplifier is linearized by using the DPD techniques.After linearization, the measured adjacent channel power ratio (ACPR) is -35.9dBc (lower) and -35.39dBc (upper). |
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| Keywords: | Dohertypower amplifier (PA) GaN HEMT inverse class-F high efficiency |
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