在片校准件参数定值方法

为解决在片校准件长时间使用后,由于参数定值发生偏差,导致测试结果不准的问题,针对在片校准件的等效电路模型,提出了一种参数定值方法。通过测试在片校准件S参数、长度和电阻的方法,对特征阻抗、开路电容、短路电感、负载电阻和电感、直通延时和损耗准确定值。在100MHz~67GHz频段范围内,用定值后的在片校准件进行了试验分析,结果表明:与使用出厂值相比,重新定值后的在片校准件测试结果更接近被测件的实际值。

Method for Definition Parameters of On-Wafer Calibration Standards

In order to solve the problem of inaccurate test results caused by deviation of parameter values after long time use of on-wafer calibration standards. Aiming at the equivalent circuit model of on-wafer calibration standards, a parameter determination method is proposed. The values of characteristic impedance, open capacitance, short inductance, load resistance and inductance, thru delay and loss are determined by measuring the s-parameters, length, and resistance of the on-wafer calibration standards. The test analysis is carried out with defined on-wafer calibration standards in the frequency range of 100MHz~67GHz. The results show that the test results of the on-wafer calibration standards after re-setting are closer to the actual values of the DUT than the factory values.