W离子注入VO2薄膜结构及红外发射性能研究 |
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引用本文: | 李仁莹,刘霖,李锦潇,吴蕾,吴晓玲,郑瑞廷,程国安.W离子注入VO2薄膜结构及红外发射性能研究[J].北京师范大学学报(自然科学版),2022,58(5):686-691. |
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作者姓名: | 李仁莹 刘霖 李锦潇 吴蕾 吴晓玲 郑瑞廷 程国安 |
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作者单位: | 1.北京师范大学核科学与技术学院,100875,北京 |
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基金项目: | 国家自然科学基金资助项目(12175020, 11575025, U1832176) |
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摘 要: | 探讨了低剂量离子注入技术对VO2薄膜的结构和红外发射性能的影响,发现1×1015 cm?2注量的W离子注入掺杂时,会对VO2薄膜的晶体结构产生一定的损伤;经400 ℃退火处理后部分恢复了薄膜的单斜相晶体结构,且退火处理后,在掺杂W离子、结构缺陷和氧空位的共同作用下,掺杂量0.12%即可使VO2薄膜的相变温度降低8.9 ℃;掺杂原子数量每增加1%,其相变温度相应变化74.2 ℃;W离子注入并经退火处理后,VO2薄膜的红外发射率为0.35~0.46,其在低温区间的红外发射率相比未注入薄膜降低了0.14,这大幅度提高了VO2薄膜在低温区的红外隐身性能.
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关 键 词: | 二氧化钒 离子注入 钨 红外辐射 |
收稿时间: | 2022-04-22 |
Structural and infrared-emission properties of W ion-implanted VO2 films |
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Affiliation: | 1.College of Nuclear Science and Technology, Beijing Normal University, 100875, Beijing, China2.Beijing Radiation Center, 100875, Beijing, China |
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Abstract: | Vanadium dioxide (VO2), a typical metal insulator transition material, potentially has wide applications in functional materials due to a change in property before and after phase transition.But such applications are limited by the phase transition temperature of 68.0 ℃.In this work, monoclinic VO2 prepared on SiO2/Si substrate was doped with low doses of W ions after ion implantation, before the films were annealed.Crystal structure of VO2 films was damaged by W ion implantation at 1×1015 ions/cm2.After annealing at 400 ℃, monoclinic crystal structure of the film was partially recovered.After annealing, phase transition temperature of VO2 thin films decreased by 8.9 ℃ with doping of 0.12%, the change rate being 74.2 ℃.Infrared emissivity was reduced to 0.46-0.35.Infrared emissivity in low temperature region was 0.14 lower than the original VO2 film.These changes greatly improved infrared stealth performance of the film in low temperature region. |
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