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Electronic Structure of Molybdenum Oxide Oxidized at Different Pressures
Authors:Dementev  P A  Ivanova  E V  Lapushkin  M N  Smirnov  D A  Timoshnev  S N
Affiliation:1.Ioffe Institute, 194021, St. Petersburg, Russia
;2.Institut für Festkörper- und Materialphysik, Technische Universität Dresden, 01062, Dresden, Germany
;3.Alferov University, 194021, St. Petersburg, Russia
;
Abstract:Semiconductors - Electronic structure of molybdenum oxides obtained by the oxidation of molybdenum at an oxygen pressure of 1 Torr (thin film) and air (thick film) was studied. It was shown that a...
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