| PECVD对硅材料的钝化作用 |
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| 引用本文： | 陈凤翔,崔容强,孟凡英.PECVD对硅材料的钝化作用[J].太阳能学报,2003,24(3):348-351. |
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| 作者姓名： | 陈凤翔 崔容强 孟凡英 |
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| 作者单位： | 上海交通大学物理系太阳能研究所,上海,200240 |
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| 摘 要： | 该文通过实验 ,发现对硅片采用双层钝化体系SiO2 /SiNx 可降低表面复合速度到S <1cm/s;而在采用PECVD钝化的过程中 ,最重要的影响因素是FGA的温度 ,退火温度越低越好 ;最后分析了H原子对硅片钝化的微观机理。
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| 关 键 词： | 沉积 钝化 Joe 硅片 退火温度 PECVD 太阳电池 |
| 文章编号： | 0254-0096(2003)03-0348-04 |
| 修稿时间： | 2002年1月19日 |
SILICON SURFACE AND BULK DEFECT PASSIVATION BY PECVD |
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| Chen Fengxiang,Cui Rongqiang,Meng Fanying.SILICON SURFACE AND BULK DEFECT PASSIVATION BY PECVD[J].Acta Energiae Solaris Sinica,2003,24(3):348-351. |
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| Authors: | Chen Fengxiang Cui Rongqiang Meng Fanying |
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| Abstract: | The effective of PECVD passivation of surface and bulk defects in Si,as well as phosphorous diffused emitters,is identified.But until now no paper reports systematic analysis on the passivation effect of PECVD.In this paper,through experiments,we find double passivation system SiO 2/SiN on silicon can minimize surface recombination velocity to less than 1cm/s;in situ PECVD passivation process,the most influence factor is temperature of FGA,with the lower temperature being preferred;at last explain the microcosmic mechanism in how hydrogen atom passivate silicon. |
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| Keywords: | deposition passivation J oe |
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