| Abstract: | A simple model for the photovoltaic processes in a diffused base silicon solar cell is presented. The practical profiles of impurity concentration are taken into account by using the method of integration by piecewise exponential approximations. The realistic variation of mobility and built-in field are considered. Such parameters of solar conversion as short circuit current, open circuit voltage and conversion efficiency are computed. Results show that these parameters are are sensitive functions of the impurity distribution in the graded base and the recombination velocity at the surface of the diffused layer. The model holds promise of its application for parametric study and optimization of the solar cell configuration. © 1997 John Wiley & Sons, Ltd. |
