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Photopatterning of heterostructured polymer Langmuir-Blodgett films |
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| Authors: | Tiesheng Li Masaya Mitsuishi Tokuji Miyashita |
| Affiliation: | a Department of Chemistry, The Key Lab of Biological Chemistry and Organic Chemistry of Henan Province, Zhengzhou University, Daxue road 75, Zhengzhou 450052, China b The Key Lab of Advanced Information Nano-materials of Zhengzhou, Daxue road 75, Zhengzhou 450052, China c Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Aobaku, 2-1-1, Katahira, Sendai, Japan |
| Abstract: | Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication. |
| Keywords: | Langmuir-Blodgett films Photopatterning Copolymer Heterostructure |
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