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基于0.25μm GaAs PHEMT工艺的32GHz毫米波单片功率放大器
引用本文:顾建忠,张健,喻筱静,钱蓉,李凌云,孙晓玮. 基于0.25μm GaAs PHEMT工艺的32GHz毫米波单片功率放大器[J]. 半导体学报, 2006, 27(12): 2160-2162
作者姓名:顾建忠  张健  喻筱静  钱蓉  李凌云  孙晓玮
作者单位:[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]中国科学院研究生院,北京100049
摘    要:设计、制造和测试了基于0.25μm栅长GaAs工艺的32GHz毫米波单片功率放大器.该功率放大器采用三级放大,工作电压为6V,工作电流为600mA.带内最大小信号增益为17.4dB,在32GHz具有0.5W的饱和功率输出.

关 键 词:毫米波单片集成电路  功率放大器  赝配高电子迁移率晶体管  GaAs PHEMT  工艺  毫米波  单片功率放大器  Power Amplifier  功率输出  小信号增益  工作电流  工作电压  级放  栅长  测试  制造  设计
文章编号:0253-4177(2006)12-2160-03
收稿时间:2006-02-27
修稿时间:2006-08-23

32GHz MMIC Power Amplifier Using 0.25μm GaAs PHEMT
Gu Jianzhong,Zhang Jian,Yu Xiaojing,Qian Rong,Li Lingyun and Sun Xiaowei. 32GHz MMIC Power Amplifier Using 0.25μm GaAs PHEMT[J]. Chinese Journal of Semiconductors, 2006, 27(12): 2160-2162
Authors:Gu Jianzhong  Zhang Jian  Yu Xiaojing  Qian Rong  Li Lingyun  Sun Xiaowei
Affiliation:Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Graduate School of the Chinese Academy of Sciences,Beijing 100049,China;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Graduate School of the Chinese Academy of Sciences,Beijing 100049,China;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
Abstract:A 32GHz 0.5W PHEMT MMIC power amplifier,which has three stages,is designed,fabricated,and measured.It operates under a 6V power supply and 600mA DC bias.A 17.4dB maximum small signal gain and 0.5W saturated output power are achieved at the operation frequency.
Keywords:MMIC  power amplifier  PHEMT
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