化学计量比LiNbO3晶体宏观生长缺陷的观察

本文对采用双坩埚提拉法(DCCZ)生长的化学计量比LiNbO3晶体中出现的机械双晶、组分过冷、包裹体等宏观生长缺陷进行了观察和分析.结果表明机械双晶通常以{102}和{104}面族为双晶面,而不是以前文献报道的{102}和{012}面族;化学计量比LiNbO3晶体双坩埚提拉法生长与同成份晶体生长不同,前者是助熔剂生长体系,生长速度稍快或温度较小的波动就会导致组分过冷,而后者属于纯熔体生长体系,不容易产生组分过冷;包裹体是由于组分过冷生长时界面失稳夹入熔体所造成的.由于这些缺陷的存在都会严重影响单晶的获得率和质量,为此,我们通过大量实验研究后提出了可以减少和避免这些生长缺陷提高晶体质量的方法.

Observation on Macroscopical Growth Defect of the Stoichiometric LiNbO3 Crystal

Phenomena of mechanical twinning, constitutional supercooling, inclusions of the stoichiometric LiNbO3 crystal grown by double crucible Czochralski method were observed and analyzed in this paper. It was found that these defects would greatly influence on the quality of crystal. Therefore a large amount of experimental studies were carried out and some points on increasing the quality of crystal were proposed based on these studies.