| CMOS电路IDDQ测试电路设计 |
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| 引用本文： | 江耀曦,邵建龙,杨晓明,何春.CMOS电路IDDQ测试电路设计[J].现代电子技术,2011,34(16):131-132,136. |
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| 作者姓名： | 江耀曦 邵建龙 杨晓明 何春 |
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| 作者单位： | 昆明理工大学信息工程与自动化学院,云南昆明,650031 |
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| 基金项目： | 云南省教育科学规划课题(GG09017); 昆明理工大学教学质量与教学改革工程重点项目(10968047) |
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| 摘 要： | 针对CMOS集成电路的故障检测,提出了一种简单的IDDQ静态电流测试方法,并对测试电路进行了设计。所设计的IDDQ电流测试电路对CMOS被测电路进行检测,通过观察测试电路输出的高低电平可知被测电路是否存在物理缺陷。测试电路的核心是电流差分放大电路,其输出一个与被测电路IDDQ电流成正比的输出。测试电路串联在被测电路与地之间,以检测异常的IDDQ电流。测试电路仅用了7个管子和1个反相器,占用面积小,用PSpice进行了晶体管级模拟,实验结果表明了测试电路的有效性。
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| 关 键 词： | IDDQ测试 测试方法 电流检测 CMOS电路 |
Design for I_(DDQ) Testing of CMOS Circuits |
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| JIANG Yao-xi,SHAO Jian-long,YANG Xiao-ming,HE Chun.Design for I_(DDQ) Testing of CMOS Circuits[J].Modern Electronic Technique,2011,34(16):131-132,136. |
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| Authors: | JIANG Yao-xi SHAO Jian-long YANG Xiao-ming HE Chun |
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| Affiliation: | JIANG Yao-xi,SHAO Jian-long,YANG Xiao-ming,HE Chun(Faculty of Information Engineering and Automation,Kunming University of Science and Technology,Kunming,Kunming 650031,China) |
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| Abstract: | A simple built-in sensor design for quiescent current(IDDQ) testing of CMOS circuits is introduced.By observing the output of the proposed circuit,whether the observed CMOS circuit has the physical defects can be gained.The main part of the proposed circuit is the current differential amplifying circuit,which has an output proportional to IDDQ of the observed CMOS circuit.The proposed circuit is connected in series between the observed CMOS circuit and ground for observing the abnormal IDDQ,and it comprises... |
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| Keywords: | IDDQ testing test method current monitoring CMOS circuit |
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