p-n结脉冲激光诱发电荷收集试验研究

测量了脉冲激光诱发半导体p-n结的瞬态脉冲电流,研究瞬态脉冲幅值和收集电荷与能量、偏压及入射位置的相关性。研究结果表明,瞬态脉冲信号幅值和收集到的总电荷随脉冲激光能量的增大而增多,与激光能量呈指数关系;收集电荷随偏压而增大;敏感区内的收集电荷数相差不大,远离敏感区的收集电荷明显减小。另外,将研究结果与重离子试验数据进行比对,两者有一定的相似性,但电荷收集脉冲幅值、脉冲波形有一定的差异。其结果为深入研究激光模拟单粒子效应技术奠定了基础。

Investigation of charge collection in p-n junctions excited with pulsed laser

ingle-event phenomena(SEP) is the malfunction of micro electronics devices caused by impact of an energetic heavy ion.To better elucidate the mechanisms,we measured the fast transient current resulting p-n junctions irradiated by pulsed laser.Pulse height spectra were generated to observe the spatial variations of charge collection properties.The transient current and charge collection varied at different laser energies.The charge collection was uniform within a sensitive area of the p-n diode,but it decreased in areas close to the edges.It was found that the collected charge(Q) was correlated with the laser energy(E) by Q=1.2579 E4/3.The charge generation data were compared with those obtained on a tandem accelerator with micro-beam of32S ion.